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IMZA120R014M1HXKSA1 GaN IC 1200V Gan Fet Transistor 14mohm SiC Trench MOSFET TO247

ShenZhen Mingjiada Electronics Co.,Ltd.
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    Buy cheap IMZA120R014M1HXKSA1 GaN IC 1200V Gan Fet Transistor 14mohm SiC Trench MOSFET TO247 from wholesalers
     
    Buy cheap IMZA120R014M1HXKSA1 GaN IC 1200V Gan Fet Transistor 14mohm SiC Trench MOSFET TO247 from wholesalers
    • Buy cheap IMZA120R014M1HXKSA1 GaN IC 1200V Gan Fet Transistor 14mohm SiC Trench MOSFET TO247 from wholesalers

    IMZA120R014M1HXKSA1 GaN IC 1200V Gan Fet Transistor 14mohm SiC Trench MOSFET TO247

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    Brand Name : Original Factory
    Model Number : IMZA120R014M1HXKSA1
    Certification : Lead free / RoHS Compliant
    Price : Contact for Sample
    Payment Terms : T/T, L/C, Western Union
    Supply Ability :
    Delivery Time : 5-8 work days
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    IMZA120R014M1HXKSA1 GaN IC 1200V Gan Fet Transistor 14mohm SiC Trench MOSFET TO247

    Transistors IMZA120R014M1HXKSA1 1200V 14mΩ SiC Trench MOSFET TO247 package


    Description

    The CoolSiC™ 1200 V, 14 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state char4acteristic. CoolSiC™ MOSFETs are ideal for hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.


    Summary of Features

    • Best in class switching and conduction losses
    • Benchmark high threshold voltage, Vth > 4 V
    • 0V turn-off gate voltage for easy and simple gate drive
    • Wide gate-source voltage range
    • Robust and low loss body diode rated for hard commutation
    • Temperature independent turn-off switching losses
    • .XT interconnection technology for best-in-class thermal performance

    FET Type:N-ChannelDrain To Source Voltage (Vdss):1200 V
    Vgs (Max):+20V, -5VPower Dissipation (Max):455W (Tc)
    Package / Case:TO-247-4Drive Voltage (Max Rds On, Min Rds On):15V, 18V

    Benefits

    • Highest efficiency
    • Reduced cooling effort
    • Higher frequency operation
    • Increased power density
    • Reduced system complexity

    Applications

    • Battery formation
    • Fast EV charging
    • Motor control and drives
    • Solutions for photovoltaic energy systems
    • Uninterruptible Power Supply (UPS)

    Diagrams


    FAQ

    Q. Are your products original?
    A: Yes, all products are original, new original import is our purpose.
    Q:Which Certificates do you have?
    A:We are ISO 9001:2015 Certified Company and member of ERAI.
    Q:Can you support small quantity order or sample?Is the sample free?
    A:Yes,we support sample order and small order.Sample cost is different according to your order or project.
    Q:How to ship my order? Is it safe?
    A:We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
    Q:What about the lead time?
    A:We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.

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